Multi-Chip-Scale Package

ABSTRACT

Some exemplary embodiments of a multi-chip semiconductor package utilizing a semiconductor substrate and related method for making such a semiconductor package have been disclosed. One exemplary embodiment comprises a first semiconductor device including, on a surface thereof, a first patterned dielectric layer, a conductive redistribution layer, a second patterned dielectric layer, and a second semiconductor device. The conductive redistribution layer connects to a first and a second patterned conductive attach material for connecting the first and second semiconductor devices to provide coplanar electrical connections for mounting on a printed circuit board. In one embodiment, the first semiconductor device is a diode having anode and cathode contacts on an upper surface thereof, and the second semiconductor device is an IGBT.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor devices. Moreparticularly, the present invention relates to packaging forsemiconductor devices.

2. Background Art

Packages combining several semiconductor components into a singlepackage can help simplify circuit design, reduce costs, and providegreater efficiency and improved performance by keeping related anddependent circuit components in close proximity. These integratedmulti-chip device packages facilitate application integration andgreater performance compared to using discrete components. Inparticular, it is often desirable to package power devices such as IGBTswith diodes for various purposes such as circuit protection or reversecurrent handling.

Previously, package designs using side-by-side co-packed components havebeen used. However, due to the space required to co-pack each circuitcomponent, a very large substrate is often necessary to support thepackage, increasing the overall package form factor. This large formfactor reduces integration flexibility for space-optimized applicationdesigns. Furthermore, to implement a cost effective package, low-costmaterials such as ceramics are often preferable for the substrate.Unfortunately, due to mismatched thermal expansion coefficients betweenceramic substrates and attached materials such as silicon, co-packdesigns using ceramic substrates are subject to heat related stressesduring operation. Over time, these heat-related stresses cause solderfatigue and may eventually cause breakage and other defects, reducinglong-term reliability.

Thus, a unique cost-effective, compact, and reliable solution is neededto support the efficient operation of multi-chip packages.

SUMMARY OF THE INVENTION

A semiconductor on semiconductor substrate multi-chip-scale package,substantially as shown in and/or described in connection with at leastone of the figures, as set forth more completely in the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic diagram of an IGBT with a parallel diode.

FIG. 2 illustrates a design of a conventional semiconductor packageco-packing an IGBT with a parallel diode.

FIGS. 3A-3H illustrate fabrication of a semiconductor package accordingto an embodiment of the invention.

FIG. 4A illustrates a top-plan view of a semiconductor package accordingto an embodiment of the invention.

FIG. 4B illustrates a cross sectional view of a semiconductor packageaccording to an embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

The present application is directed to a semiconductor on semiconductorsubstrate multi-chip-scale package. The following description containsspecific information pertaining to the implementation of the presentinvention. One skilled in the art will recognize that the presentinvention may be implemented in a manner different from thatspecifically discussed in the present application. Moreover, some of thespecific details of the invention are not discussed in order not toobscure the invention. The specific details not described in the presentapplication are within the knowledge of a person of ordinary skill inthe art.

The drawings in the present application and their accompanying detaileddescription are directed to merely exemplary embodiments of theinvention. To maintain brevity, other embodiments of the invention,which use the principles of the present invention, are not specificallydescribed in the present application and are not specificallyillustrated by the present drawings.

FIG. 1 illustrates a schematic diagram of an IGBT with a parallel diode.Collector 104, gate 106, and emitter 108 of the IGBT are indicated inFIG. 1, with diode 102 connected in parallel. As shown by theorientation of diode 102, emitter 108 is connected to the anode side ofdiode 102 whereas collector 104 is connected to the cathode side ofdiode 102. This parallel diode circuit design may provide desirablefeatures such as high reverse current handling for the IGBT.

FIG. 2 illustrates a design of a conventional semiconductor packageco-packing an IGBT with a parallel diode. The top of diode 210, shownanode side facing up, is connected to the top of IGBT 220, shown emitterside facing up, via wirebonds 212. This connection corresponds toemitter 108 connecting to the anode side of diode 102 in FIG. 1.Wirebonds 212 also connect the emitter of IGBT 220 to leg contact 206for external circuit connection. Copper leadframe 208, which may bedisposed on a ceramic substrate, provides a connection between thebottom of diode 210, or the cathode side, and the bottom of IGBT 220, orthe collector side. This connection corresponds to collector 104connecting to the cathode side of diode 102 in FIG. 1. Copper leadframe208 also extends down to connect to leg contact 204 for external circuitconnection. Finally, wirebond 214 connects gate 216 of IGBT 220 with legcontact 202 for external circuit connection, corresponding to gate 106of FIG. 1. After being surrounded by mold 222, a completed packageimplementing the circuit diagram of FIG. 1 is thus ready to beintegrated onto a PCB or other mounting target via leg contacts 202,204, and 206.

While the conventional co-pack design shown in FIG. 2 implements thecircuit of FIG. 1, several drawbacks still exist. As shown in FIG. 2,the connections for the upper side of the circuits are via wirebonds 212and 214, which is much less effective for electrical and thermalconduction compared to direct solder attachment. Furthermore, sincediode 210 and IGBT 220 are placed side-by-side, a large area substrateis required, creating a large and unwieldy package form factor. For acost effective package, a ceramic substrate is preferable, but due tothermal expansion coefficient mismatches, the package will be subject tomechanical stresses during thermal cycling occurring within normaloperation, reducing package reliability and longevity.

FIGS. 3A-3H illustrate a fabrication of a semiconductor packageaccording to an embodiment of the invention. In the example illustratedby FIGS. 3A-3H, diode 310 is used as a substrate for mounting an IGBT360. However, alternative embodiments may use different semiconductordevices or integrate more than two semiconductor devices, as required bythe desired circuit design.

In a conventional diode, the anode and cathode contacts may each occupysubstantially the entire opposite major surfaces of the diode. However,diode 310 in FIG. 3A is designed to have a contact for anode 312 in thecenter of the upper surface of diode 310 and a contact for cathode 314around an extended perimeter of anode 312 and extending to the lowersurface of diode 310. Thus, contacts for both anode 312 and cathode 314are readily available from the upper surface of diode 310, and a contactfor cathode 314 is available from the lower surface of diode 310.

Turning to FIG. 3B, a first dielectric layer 330 a is patterned on topof diode 310, with openings exposing contacts for anode 312 and cathode314. As shown in FIG. 3B, cathode 314 is exposed as a rectangularcontact to the right, whereas anode 312 is exposed as a largerectangular contact with a portion of the lower left corner removed. Therest of the top of diode 310 is covered and insulated by dielectriclayer 330 a.

Addressing FIG. 3C, a conductive redistribution layer is patterned ontop of diode 310, covering and extending through dielectric layer 330 ato make contact with the exposed contacts of FIG. 3B. As shown in FIG.3C, the conductive redistribution layer is formed with openings tocreate three distinct regions, or conductive redistribution regions 340a, 340 b, and 340 c, which may comprise conductive materials such ascopper. Dielectric layer 330 a can be seen remaining within the openingsbetween the regions. The shape of the regions may be defined in anydesired manner to support particular electrical routing requirements. Inthe case of FIG. 3C, conductive redistribution region 340 a eventuallyroutes the gate contact of IGBT 360 to the lower-left contact of thefinal package, conductive redistribution region 340 b eventually routesthe collector contact of IGBT 360 to the upper-left two contacts of thefinal package, and conductive redistribution region 340 c simply passesthe cathode contact of diode 310 directly upwards.

With respect to FIG. 3D, a second dielectric layer 330 b is patterned ontop of diode 310 with a grid of openings defining pad connections forthe conductive redistribution regions below. Additionally, dielectriclayer 330 b extends through the conductive redistribution layer tocontact the exposed dielectric layer 330 a below in FIG. 3C, therebyelectrically insulating conductive redistribution regions 340 a-340 c.In this manner, a grid of pads is exposed at the top, facilitatingintegration with external components by encouraging self-aligning solderjoints.

Discussing FIG. 3E, a first conductive attach material layer 350 (alsoreferred to as a “patterned conductive attach material” in the presentapplication) is applied to the central array of four by five padsindicated by the dotted region. Conductive attach material layer 350 maycomprise, for example, solder balls or bumps, a solder pre-form, oranother means of conductive attachment. After conductive attach materiallayer 350 is applied, diode 310, or the first semiconductor device, isnow ready to receive a second semiconductor device, or IGBT 360.

Turning to FIG. 3F, an upper side of IGBT 360 is shown, with a pad forgate 362 located to the upper-right. Although only one pad for emitter364 is indicated, it should be understood that the remaining pads on theupper side are all pad contacts for emitter 364. Collector 366 isindicated on the lower side of IGBT 360, comprising a four by five gridof pads. Since the pad surfaces of FIG. 3E have been prepared withconductive attach material layer 350, IGBT 360 is now ready forflip-chip mounting on diode 310.

In FIG. 3G, it can be seen that IGBT 360 has been flip-chipped onto thesurface of diode 310. As a result of the flipping, the four by five gridof pads for collector 366 is now visible on top, as indicated by thedotted region. The pad for gate 362 and one of the pads for emitter 364are as indicated on the bottom surface of IGBT 360, being in directcontact with conductive attach material layer 350. At this point, asolder reflow or another binding process may have already taken place tofirmly secure IGBT 360 onto diode 310, creating a single unifiedpackage.

Turning to FIG. 3H, a second conductive attach material layer 370 (alsoreferred to as a “patterned conductive attach material” in the presentapplication) is applied to the all of the exposed pads on top of thepackage. However, since the middle four by five grid of pads are at ahigher elevation than the outer perimeter pads due to IGBT 360,conductive attach material layer 370 may be conceptualized as separatedistinct layers for each pad elevation. Thus, conductive attach materiallayer 370 may be split into an inner central layer starting at a higherelevation and an outer perimeter layer starting at a lower elevation.These two layers be formed such that their top ending heights aresubstantially coplanar, allowing the package to be readily flip-chippedonto a flat receiving surface such as a PCB. However, if alternativetopologies are desired for non-planar device integration, certain layersmay lack coplanar pad contacts and different layers may not necessarilybe coplanar with each other. For the example shown in FIG. 3H, coplanarexternal connections are assumed, and thus all pads are covered withconductive attach material layers reaching the same height.

By following the fabrication steps shown in FIGS. 3A-3H, a semiconductorpackage can be created that efficiently utilizes a semiconductor deviceas a substrate for another semiconductor device in a compact form factorusing existing well-known processes for cost effective fabrication. Costsavings are thus achieved since separate substrate materials can beomitted. By using thermally matched materials for the semiconductordevices, such as using all silicon, mechanical stability can be greatlyenhanced as thermal expansion and contraction can occur at the samerate, mitigating the deleterious effects of thermal cycling. Moreover,by utilizing direct solder connections for short path connectionsbetween semiconductor devices and for board integration, higher thermalperformance and conductivity can be achieved by avoiding the use ofinefficient wirebonds. While only two semiconductor devices are used inthe present example, alternative embodiments may include severalsemiconductor devices in a single package through careful design of acomplex conductive redistribution layer.

FIG. 4A illustrates a top-plan view of a semiconductor package accordingto an embodiment of the invention. Contacts 480 a through 480 f areshown on the top of the semiconductor package. Conductive redistributionregions 340 a to 340 c are shown again by dotted regions 490 a to 490 cin FIG. 4A. Cross sectional line 402 indicates the cross sectional sliceillustrated below in FIG. 4B.

FIG. 4B illustrates a cross sectional view of a semiconductor packageaccording to an embodiment of the invention. The cross sectional viewshown in FIG. 4B corresponds to cross sectional line 402 of FIG. 4A.Dielectric layers 430 a and 430 b correspond to dielectric layers 330 aand 330 b from FIGS. 3B and 3C, and conductive attach material layer 450corresponds to conductive attach material layer 350 from FIG. 3E. Diode410 is shown as the substrate receiving IGBT 460 for the package.Cathode 414 of diode 410 is connected straight through using conductiveredistribution region 440 c and conductive attach material layer 470 b,providing cathode connections to contacts 480 a, 480 b, and 480 c on topof the semiconductor package, as shown in FIG. 4A. Anode 412 of diode410 is connected through conductive redistribution region 440 b toconnect to pads for collector 466 of IGBT 460. However, if crosssectional line 402 is moved further up the diagram in FIG. 4A, thenconductive redistribution region 440 b further extends towards the leftedge to connect contacts 480 d and 480 e, as indicated by dotted region490 b FIG. 4A.

In this manner, the diode anode to IGBT collector connection representedby wirebonds 212 of FIG. 2 can be routed to contacts 480 d and 480 e ofthe package. This re-routing is needed since the center of the packageis already occupied by the emitter 464 connections of IGBT 460,continuing through the collector 466 connections of IGBT 460 andconductive attach material layer 470 a. Similarly, a connection for gate462 of IGBT 460 is brought across to the left using conductiveredistribution region 440 a connected to conductive attach materiallayer 470 b, providing a gate connection through contact 480 f.

After the package of FIG. 4B is flip-chipped or otherwise integratedonto a PCB or another target platform, traces on the PCB or anothermeans of connection can then be made to connect emitter 466 with cathode414, thus providing the diode cathode to IGBT emitter connectionrepresented by copper leadframe 208 of FIG. 2. Therefore, it can be seenthat the structure of FIG. 4B provides the same functionality as theco-pack structure of FIG. 2, but in a more efficient, compact, andreliable manner as discussed above.

Thus, a semiconductor package using a semiconductor device as asubstrate and related method for making such a semiconductor packagehave been described. The invention's innovative package allows for acompact form factor, improved electrical and thermal conductivity,enhanced mechanical stability, and cost effective fabrication comparedto conventional co-packages. These benefits may be of particularinterest for packages integrating power devices such as IGBTs withdiodes, as discussed in the present examples.

From the above description of the invention it is manifest that varioustechniques can be used for implementing the concepts of the presentinvention without departing from its scope. Moreover, while theinvention has been described with specific reference to certainembodiments, a person of ordinary skills in the art would recognize thatchanges can be made in form and detail without departing from the spiritand the scope of the invention. As such, the described embodiments areto be considered in all respects as illustrative and not restrictive. Itshould also be understood that the invention is not limited to theparticular embodiments described herein, but is capable of manyrearrangements, modifications, and substitutions without departing fromthe scope of the invention.

1-13. (canceled)
 14. A method of fabricating a semiconductor package,said method comprising: forming, on a first semiconductor device, afirst patterned dielectric layer, a conductive redistribution layer inelectrical contact with said first semiconductor device, and a secondpatterned dielectric layer; forming a first patterned conductive attachmaterial selectively coupled to said conductive redistribution layer;placing a second semiconductor device in electrical contact with saidfirst patterned conductive attach material; and forming a secondpatterned conductive attach material selectively coupled to said secondsemiconductor device; said second patterned conductive attach materialbeing coplanar with said first patterned conductive attach material soas to be together mechanically and electrically connectable to a printedcircuit board.
 15. The method of claim 14, wherein said conductiveredistribution layer comprises copper.
 16. The method of claim 14,wherein said first semiconductor device is a diode.
 17. The method ofclaim 16, wherein said diode includes an anode contact disposed on anupper surface of said diode and a cathode contact disposed around aperimeter of said anode contact.
 18. The method of claim 14, whereinsaid second semiconductor device is an IGBT.
 19. The method of claim 18,wherein said IGBT includes a gate contact and an emitter contact on alower surface of said IGBT and a collector contact on an upper surfaceof said IGBT.
 20. The method of claim 14, wherein said firstsemiconductor device is a diode and said second semiconductor device isan IGBT.
 21. A method comprising: forming, on a first semiconductordevice, a first patterned dielectric layer, a conductive redistributionlayer, and a second patterned dielectric layer; forming a firstpatterned conductive attach material selectively coupled to saidconductive redistribution layer; placing a second semiconductor devicein electrical contact with said first patterned conductive attachmaterial; forming a second patterned conductive attach materialselectively coupled to said second semiconductor device; said first andsecond patterned conductive attach materials being connectable to aprinted circuit board.
 22. The method of claim 21, wherein saidconductive redistribution layer comprises copper.
 23. The method ofclaim 21, wherein said first semiconductor device is a diode.
 24. Themethod of claim 21, wherein said diode includes an anode contactdisposed on an upper surface of said diode and a cathode contactdisposed around a perimeter of said anode contact.
 25. The method ofclaim 21, wherein said second semiconductor device is an IGBT.
 26. Themethod of claim 21, wherein said IGBT includes a gate contact and anemitter contact on a lower surface of said IGBT and a collector contacton an upper surface of said IGBT.
 27. The method of claim 21, whereinsaid first semiconductor device is a diode and said second semiconductordevice is an IGBT.
 28. A method comprising: forming, on a diode, a firstpatterned dielectric layer, a conductive redistribution layer, and asecond patterned dielectric layer; forming a first patterned conductiveattach material selectively coupled to said conductive redistributionlayer; placing an IGBT in electrical contact with said first patternedconductive attach material; forming a second patterned conductive attachmaterial selectively coupled to said IGBT; said first and secondpatterned conductive attach materials being connectable to a printedcircuit board.
 29. The method of claim 28, wherein said conductiveredistribution layer comprises copper.
 30. The method of claim 28,wherein said diode includes an anode contact disposed on an uppersurface of said diode and a cathode contact disposed around a perimeterof said anode contact.
 31. The method of claim 28, wherein said IGBTincludes a gate contact and an emitter contact on a lower surface ofsaid IGBT and a collector contact on an upper surface of said IGBT.